Early access — opening soon

Predict etch rates.
With confidence.

Every prediction draws from 810+ records extracted from peer-reviewed literature. Results include a confidence interval, source DOI, and selectivity ratios for adjacent materials.

810+ Records
18 Materials
50+ Etchants
129+ Selectivity pairs
What we are building
Phase 1
Silicon and dielectrics Si, SiO₂, Si₃N₄

The foundation of semiconductor wet processing. Isotropic and anisotropic etch in KOH, TMAH, HF and BHF-based systems. Orientation and doping dependence for silicon. Selectivity pairs for all three material combinations.

Phase 2
High-k dielectrics and safety integration Al₂O₃, HfO₂

ALD and sputtered high-k oxides in dilute HF, BHF, H₃PO₄ and SC-1 systems. Integrated GHS hazard information for all supported etchants, sourced from PubChem. Step-by-step preparation guidance with correct addition order and PPE requirements.

Phase 3
Transition metals Ti, Al, Cr, Au, Ni

Thin film metallization layers common in MEMS, packaging and interconnect fabrication. Etch rates in standard metal etchants, H₃PO₄:HNO₃:CH₃COOH blends, peroxide and fluoride-based systems. Selectivity relative to underlying dielectrics and silicon.

Phase 4
III/V semiconductors and metals Early access GaAs ✓, InP ✓, InGaP ✓, GaN ✓, W ✓, Pt ✓, Cu ✓

Compound semiconductors for photonics, RF and power devices, plus refractory metals and copper for interconnect and MEMS applications. All materials are now available in early access. Photo-assisted etch detection is active for GaAs, InP, InGaP and GaN: light exposure can increase etch rates 5 to 50 times and requires explicit user confirmation.

Phase 5
Advanced materials SiC, AlGaAs, InGaAs, InGaAsP, ITO, resists

Wide-bandgap semiconductors, quaternary III/V alloys, transparent conductive oxides and polymer resists. Completes the full wet-etch material stack encountered in compound semiconductor and advanced MEMS processes.

What to expect
Probabilistic output

Min/expected/max intervals with confidence scores. Arrhenius extrapolation to temperatures outside the measured range, with propagated uncertainty.

DOI-linked sources

Every value traces back to peer-reviewed literature. No black-box numbers. Each result lists the source count and DOI references used in the prediction.

Selectivity network

Material-pair selectivity matrix derived from the same literature database. Suitable, Marginal and Avoid thresholds computed automatically for mask compatibility.

Safety and preparation

GHS hazard data from PubChem and step-by-step preparation guidance with correct addition order and PPE requirements for every supported etchant.

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